These needs have driven the emergence of a new transistor architecture, RibbonFET, 11 years after the introduction of FinFET. In it, the gate completely surrounds the channel, which is now formed of nanoscale silicon ribbons, providing tighter control over the charge carriers within the channel. Using these nanoribbons (also called nanosheets), we can again use photolithography to change the width of the transistors as needed.
After removing the quantization constraints, we can generate the appropriate size width for the application. This allows us to balance power, performance and cost. What’s more, by stacking and operating Ribbons in parallel, the device can drive more current, increasing performance without increasing device area.